THERMOELECTRIC PROCESSES IN AN EFFICIENT LIGHT-EMITTING TRANSISTOR

Objectives Development of energy-efficient light-emitting bipolar semiconductor structures. Method   A method for transforming thermoelectric heat in bipolar semiconductor structures into optical-range electromagnetic radiation, which preserves the cooling effect on thermoelectric transitions, is pr...

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Veröffentlicht in:Vestnik Dagestanskogo gosudarstvennogo tehničeskogo universiteta. Tehničeskie nauki (Online) 2019-11, Vol.46 (3), p.8-19
Hauptverfasser: Gadzhiev, H. M., Akhmedov, M. E., Gadzhieva, S. M., Kurbanova, P. A.
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Sprache:eng
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Zusammenfassung:Objectives Development of energy-efficient light-emitting bipolar semiconductor structures. Method   A method for transforming thermoelectric heat in bipolar semiconductor structures into optical-range electromagnetic radiation, which preserves the cooling effect on thermoelectric transitions, is proposed. Instead of transferring the information impulse electrically from the baseemitter light-emitting transition, the information is transferred directly to the light-absorbing basecollector transition by photons or following multiple re-reflections from mirror metal electrodes. Results Unlike conventional optocouplers discretely separated in space, the novel optocouplers described in the article are integrated into a single electronic component using the principle of LED radiation. As a result, light-emitting bipolar semiconductor structures will result in the creation of more powerful, faster and better integrated devices. Conclusion Light-emitting bipolar semiconductor structures will not only increase the reliability of electronic components across a wide range of performance characteristics, but also increase energy efficiency through the use of optical radiation recovery. The future development of light-efficient transistors improves integration and increases processor performance, at the same time as reducing the power consumption of the cooling system and the power supply of the device itself.
ISSN:2073-6185
2542-095X
DOI:10.21822/2073-6185-2019-46-3-8-19