Effect of impurities on the Raman scattering of 6H-SiC crystals

Raman spectroscopy was applied to different-impurity-doped 6H-SiC crystals. The first-order Raman spectra of N-, Al- and B-doped 6H-SiC were found to be shifted to higher frequency when compared with undoped samples. However, the first-order Raman spectra of V-doped samples was shifted to lower freq...

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Veröffentlicht in:	Materials research (São Carlos, São Paulo, Brazil) São Paulo, Brazil), 2012-12, Vol.15 (6), p.833-836
Hauptverfasser:	Lin, S, Chen, Z, Li, L, Yang, C
Format:	Artikel
Sprache:	eng ; por
Schlagworte:	6H-SiC Aluminum Crystals Energy levels ENGINEERING, CHEMICAL Impurities impurity MATERIALS SCIENCE, MULTIDISCIPLINARY METALLURGY & METALLURGICAL ENGINEERING Polytypes Raman scattering Raman spectra Raman spectroscopy
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Zusammenfassung:	Raman spectroscopy was applied to different-impurity-doped 6H-SiC crystals. The first-order Raman spectra of N-, Al- and B-doped 6H-SiC were found to be shifted to higher frequency when compared with undoped samples. However, the first-order Raman spectra of V-doped samples was shifted to lower frequency, revealing that there was low free carrier concentration, which might be induced by the deep energy level effect of V impurity. Second-order Raman spectra were independent of polytype and impurity type.
ISSN:	1516-1439 1980-5373 1980-5373
DOI:	10.1590/s1516-14392012005000108