Structure Optimization of Planar Nanoscale Vacuum Channel Transistor

Structure Optimization of Planar Nanoscale Vacuum Channel Transistor

Due to its unique structure, discoveries in nanoscale vacuum channel transistors (NVCTs) have demonstrated novel vacuum nanoelectronics. In this paper, the structural parameters of planar-type NVCTs were simulated, which illustrated the influence of emitter tip morphology on emission performance. Ba...

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Veröffentlicht in:Micromachines (Basel) 2023-02, Vol.14 (2), p.488
Hauptverfasser: Xu, Ji, Lin, Congyuan, Li, Yu, Zhao, Xueliang, Shi, Yongjiao, Zhang, Xiaobing
Format: Artikel
Sprache:eng
Schlagworte:
Design and construction
Design specifications
Electric fields
Electrodes
Electron transport
Emitters
fabrication
field emission
Gamma rays
Gold
Mathematical optimization
Morphology
Nanoelectronics
nanoscale vacuum channel
Optimization
Radiation
Semiconductor devices
Simulation
Thin films
Transistors
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Beschreibung
Zusammenfassung:Due to its unique structure, discoveries in nanoscale vacuum channel transistors (NVCTs) have demonstrated novel vacuum nanoelectronics. In this paper, the structural parameters of planar-type NVCTs were simulated, which illustrated the influence of emitter tip morphology on emission performance. Based on simulations, we successfully fabricated back-gate and side-gate NVCTs, respectively. Furthermore, the electric properties of NVCTs were investigated, showing the potential to realize the high integration of vacuum transistors.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi14020488