Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices

Gallium nitride continues to be a material of intense interest for the ongoing advancement of electronic and optoelectronic devices. While the bulk of today’s markets for low-performance devices is still met with silicon and blue/UV LEDs derived from metal–organic chemical vapor deposition gallium n...

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Veröffentlicht in:Crystals (Basel) 2023-07, Vol.13 (7), p.1004
Hauptverfasser: Stoddard, Nathan, Pimputkar, Siddha
Format: Artikel
Sprache:eng
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Zusammenfassung:Gallium nitride continues to be a material of intense interest for the ongoing advancement of electronic and optoelectronic devices. While the bulk of today’s markets for low-performance devices is still met with silicon and blue/UV LEDs derived from metal–organic chemical vapor deposition gallium nitride grown on foreign substrates such as sapphire and silicon carbide, the best performance values consistently come from devices built on bulk-grown gallium nitride from native seeds. The most prominent and promising of the bulk growth methods is the ammonothermal method of high-pressure solution growth. The state-of-the-art from the last five years in ammonothermal gallium nitride technology is herein reviewed within the general categories of growth technology, characterization and defects as well as device performance.
ISSN:2073-4352
2073-4352
DOI:10.3390/cryst13071004