Silicon Carbide Nanostructures as Potential Carbide Material for Electrochemical Supercapacitors: A Review

Silicon carbide (SiC) is a very promising carbide material with various applications such as electrochemical supercapacitors, photocatalysis, microwave absorption, field-effect transistors, and sensors. Due to its enticing advantages of high thermal stability, outstanding chemical stability, high th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Nanomaterials (Basel, Switzerland) Switzerland), 2022-12, Vol.13 (1), p.150
Hauptverfasser: Ojha, Gunendra Prasad, Kang, Gun Woong, Kuk, Yun-Su, Hwang, Ye Eun, Kwon, Oh Hoon, Pant, Bishweshwar, Acharya, Jiwan, Park, Yong Wan, Park, Mira
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Silicon carbide (SiC) is a very promising carbide material with various applications such as electrochemical supercapacitors, photocatalysis, microwave absorption, field-effect transistors, and sensors. Due to its enticing advantages of high thermal stability, outstanding chemical stability, high thermal conductivity, and excellent mechanical behavior, it is used as a potential candidate in various fields such as supercapacitors, water-splitting, photocatalysis, biomedical, sensors, and so on. This review mainly describes the various synthesis techniques of nanostructured SiC (0D, 1D, 2D, and 3D) and its properties. Thereafter, the ongoing research trends in electrochemical supercapacitor electrodes are fully excavated. Finally, the outlook of future research directions, key obstacles, and possible solutions are emphasized.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano13010150