Free-standing 2D gallium nitride for electronic, excitonic, spintronic, piezoelectric, thermoplastic, and 6G wireless communication applications

Two-dimensional gallium nitride (2D GaN) with a large direct bandgap of ~5.3 eV, a high melting temperature of ~2500 °C, and a large Young’s modulus ~20 GPa developed for miniaturized interactive electronic gadgets can function at high thermal and mechanical loading conditions. Having various electronic, optoelectronic, spintronic, energy storage devices and sensors in perspective and the robust nature of 2D GaN, it is highly imperative to explore new pathways for its synthesis. Moreover, free-standing sheets will be desirable for large-area applications. We report our discovery of the synthesis of free-standing 2D GaN atomic sheets employing sonochemical exfoliation and the modified Hummers method. Exfoliated 2D GaN atomic sheets exhibit hexagonal and striped phases with microscale lateral dimensions and excellent chemical phase purity, confirmed by Raman and X-ray photoelectron spectroscopy. 2D GaN is highly stable, as confirmed by TGA measurements. While photodiode, FET, spintronics, and SERS-based molecular sensing, IRS element in 6G wireless communication applications of 2D GaN have been demonstrated, its nanocomposite with PVDF exhibits an excellent thermoplastic and piezoelectric behavior. The photodiode, FET, spintronic, piezoelectric, thermoplastic and molecular sensing applications of free-standing 2D GaN synthesized by sonochemical and Hummer’s method.