STRUCTURE, MORPHOLOGY AND ELECTRICAL PROPERTIES OF TRANSPARENT NANOMESHY ALUMINUM FILMS

Nanomeshy aluminum film is the promising alternative to a tin-doped indium oxide film (ITO) as transparent conductive electrodes. In this paper we describe the fabrication of a nanomeshy aluminum film by electrochemical anodization of aluminum deposited by magnetron sputtering on a glass substrate. The process of anodization is strictly controlled by the characteristic changes of process parameters, followed by selective chemical etching of aluminum oxide. We proposed the model for a nanomeshy Al film and calculated numerically the dependences of their optical transmittance and surface resistance on the characteristic dimensions of the network structure. The proposed method allows fabricating the uniform and stable nanomeshy aluminum film with transparency up to 80% with less than 50 Ohm/ð resistance.