Direct visualization of current-induced spin accumulation in topological insulators

Charge-to-spin conversion in various materials is the key for the fundamental understanding of spin-orbitronics and efficient magnetization manipulation. Here we report the direct spatial imaging of current-induced spin accumulation at the channel edges of Bi 2 Se 3 and BiSbTeSe 2 topological insulators as well as Pt by a scanning photovoltage microscope at room temperature. The spin polarization is along the out-of-plane direction with opposite signs for the two channel edges. The accumulated spin direction reverses sign upon changing the current direction and the detected spin signal shows a linear dependence on the magnitude of currents, indicating that our observed phenomena are current-induced effects. The spin Hall angle of Bi 2 Se 3 , BiSbTeSe 2 , and Pt is determined to be 0.0085, 0.0616, and 0.0085, respectively. Our results open up the possibility of optically detecting the current-induced spin accumulations, and thus point towards a better understanding of the interaction between spins and circularly polarized light. Charge-to-spin conversion is a key theme of spintronics and its realization in topological materials is highly desired. Here, Liu et al. report spatial imaging of current-induced spin accumulation at the edges of Bi 2 Se 3 and BiSbTeSe 2 topological insulators.