Engineering edge-state currents at the interface between narrow ribbons of two-dimensional topological insulators

We consider a junction between two semi-infinite narrow ribbons of a two-dimensional (2D) topological insulator (TI) and calculate the electron current through the interface carried by one-dimensional (1D) edge states formed in the bulk band gap. In addition to an abrupt interface between ribbons, w...

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Veröffentlicht in:Physical review research 2020-05, Vol.2 (2), p.023242, Article 023242
Hauptverfasser: Ishida, H., Liebsch, A.
Format: Artikel
Sprache:eng
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Zusammenfassung:We consider a junction between two semi-infinite narrow ribbons of a two-dimensional (2D) topological insulator (TI) and calculate the electron current through the interface carried by one-dimensional (1D) edge states formed in the bulk band gap. In addition to an abrupt interface between ribbons, we also consider a configuration where one or two rectangular islands of finite length are sandwiched between these ribbons. We demonstrate that it is feasible to create “current-on” and “current-off” states by modifying the energy dispersion of 1D interface edge states and the resonant levels localized at the boundary of the island regions.
ISSN:2643-1564
2643-1564
DOI:10.1103/PhysRevResearch.2.023242