Programmable van‐der‐Waals heterostructure‐enabled optoelectronic synaptic floating‐gate transistors with ultra‐low energy consumption

Van der Waals (vdW) heterostructures provide a unique opportunity to develop various electronic and optoelectronic devices with specific functions by designing novel device structures, especially for bioinspired neuromorphic optoelectronic devices, which require the integration of nonvolatile memory and excellent optical responses. Here, we demonstrate a programmable optoelectronic synaptic floating‐gate transistor based on multilayer graphene/h‐BN/MoS2 vdW heterostructures, where both plasticity emulation and modulation were successfully realized in a single device. The dynamic tunneling process of photogenerated carriers through the as‐fabricated vdW heterostructures contributed to a large memory ratio (105) between program and erase states. Our device can work as a functional or silent synapse by applying a program/erase voltage spike as a modulatory signal to determine the response to light stimulation, leading to a programmable operation in optoelectronic synaptic transistors. Moreover, an ultra‐low energy consumption per light spike event (~2.5 fJ) was obtained in the program state owing to a suppressed noise current by program operation in our floating‐gate transistor. This study proposes a feasible strategy to improve the functions of optoelectronic synaptic devices with ultra‐low energy consumption based on vdW heterostructures designed for highly efficient artificial neural networks. A neuromorphic optoelectronic floating‐gate transistor based on multilayer graphene/h‐BN/MoS2 vdW heterostructure exhibits programmable synaptic plasticity due to the unique light‐induced carrier tunneling through vdW heterostructure. Ultra‐low energy consumption for the electrical response to light stimulation is also realized under a low Vds at program state, demonstrating its great potential in building efficient artificial neural networks based on vdW heterostructures.