Direct electron beam patterning of electro-optically active PEDOT:PSS

The optical and electronic tunability of the conductive polymer poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) has enabled emerging applications as diverse as bioelectronics, flexible electronics, and micro- and nano-photonics. High-resolution spatial patterning of PEDOT:PSS op...

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Veröffentlicht in:Nanophotonics (Berlin, Germany) Germany), 2024-01, Vol.13 (12), p.2271-2280
Hauptverfasser: Doshi, Siddharth, Ludescher, Dominik, Karst, Julian, Floess, Moritz, Carlström, Johan, Li, Bohan, Mintz Hemed, Nofar, Duh, Yi-Shiou, Melosh, Nicholas A., Hentschel, Mario, Brongersma, Mark, Giessen, Harald
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Sprache:eng
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Zusammenfassung:The optical and electronic tunability of the conductive polymer poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) has enabled emerging applications as diverse as bioelectronics, flexible electronics, and micro- and nano-photonics. High-resolution spatial patterning of PEDOT:PSS opens up opportunities for novel active devices in a range of fields. However, typical lithographic processes require tedious indirect patterning and dry etch processes, while solution-processing methods such as ink-jet printing have limited spatial resolution. Here, we report a method for direct write nano-patterning of commercially available PEDOT:PSS through electron-beam induced solubility modulation. The written structures are water stable and maintain the conductivity as well as electrochemical and optical properties of PEDOT:PSS, highlighting the broad utility of our method. We demonstrate the potential of our strategy by preparing prototypical nano-wire structures with feature sizes down to 250 nm, an order of magnitude finer than previously reported direct write methods, opening the possibility of writing chip-scale microelectronic and optical devices. We finally use the high-resolution writing capabilities to fabricate electrically-switchable optical diffraction gratings. We show active switching in this archetypal system with >95 % contrast at CMOS-compatible voltages of +2 V and −3 V, offering a route towards highly-miniaturized dynamic optoelectronic devices.
ISSN:2192-8606
2192-8614
2192-8614
DOI:10.1515/nanoph-2023-0640