Steep Slope Field Effect Transistors Based on 2D Materials

With field effect transistor (FET) sustained to downscale to sub‐10 nm nodes, performance degradation originates from short channel effects (SCEs) degradation and power consumption increment attributed to inhibition of supply voltage (VDD) scaling down proportionally caused by thermionic limit subthreshold swing (SS) (60 mV dec−1) pose substantial challenges for today's semiconductor industry. To further sustain the Moore's law life, incorporation of new device concepts or new materials are imperative. 2D materials are predicted to be able to combat SCEs by virtue of high carrier mobility maintainability regardless of thickness thinning down, dangling bonds free surface and atomic thickness, which contributes to super gate electrostatic controllability. To overcome increasing power dissipation problem, new device structures including negative capacitance FET (NCFET), tunnel FET (TFET), dirac source FET (DSFET) and the like, which show superiority in decreasing VDD by lowering SS below thermionic limit of 60 mV dec−1 have been brought out. The combination of 2D materials and ultralow steep slope device structures holds great promise for low power‐dissipation electronics, which encompass both suppressed SCEs and reduced VDD simultaneously, leading to improved device performance and lowered power dissipation. This review manuscript mainly focus on giving readers a concise concept of green transistors with steep slopes based on 2D materials, including but not limited to 2D NCFET, 2D DSFET and 2D TFET structures. These kinds of 2D materials based green transistors concurrently combine the merits of lower power consumption of green steep slope transistors and superelectrostatic gate controllability and short channel effect immunity properties of 2D materials, holding substantial potentials for applications in low power consumption electronics.