A Low-G Silicon Inertial Micro-Switch with Enhanced Contact Effect Using Squeeze-Film Damping

A Low-G Silicon Inertial Micro-Switch with Enhanced Contact Effect Using Squeeze-Film Damping

Contact time is one of the most important properties for inertial micro-switches. However, it is usually less than 20 μs for the switch with rigid electrode, which is difficult for the external circuit to recognize. This issue is traditionally addressed by designing the switch with a keep-close func...

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Veröffentlicht in:Sensors (Basel, Switzerland) Switzerland), 2017-02, Vol.17 (2), p.387-387
Hauptverfasser: Peng, Yingchun, Wen, Zhiyu, Li, Dongling, Shang, Zhengguo
Format: Artikel
Sprache:eng
Schlagworte:
Acceleration
acceleration switch
Circuit design
Contact
contact time
Damping
Damping ratio
Dynamics
Electrodes
Electroplating
inertial switch
Loads (forces)
MEMS
Micromachining
Silicon
Springs (elastic)
squeeze-film damping
Static loads
Switches
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Beschreibung
Zusammenfassung:Contact time is one of the most important properties for inertial micro-switches. However, it is usually less than 20 μs for the switch with rigid electrode, which is difficult for the external circuit to recognize. This issue is traditionally addressed by designing the switch with a keep-close function or flexible electrode. However, the switch with keep-close function requires an additional operation to re-open itself, causing inconvenience for some applications wherein repeated monitoring is needed. The switch with a flexible electrode is usually fabricated by electroplating technology, and it is difficult to realize low-g switches (
ISSN:1424-8220
1424-8220
DOI:10.3390/s17020387