Giant electrostriction-like response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si (100)

Lead-free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrostriction has recently been gaining popularity to obtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, we report record values of electrostrictive strain coefficients ( M 31 ) at frequencies as large as 5 kHz (1.04×10 −14 m 2 /V 2 at 1 kHz, and 3.87×10 −15 m 2 /V 2 at 5 kHz) using A-site and oxygen-deficient barium titanate thin-films, epitaxially integrated onto Si. The effect is robust and retained upon cycling upto 6 million times. Our perovskite films are non-ferroelectric, exhibit a different symmetry compared to stoichiometric BaTiO 3 and are characterized by twin boundaries and nano polar-like regions. We show that the dielectric relaxation arising from the defect-induced features correlates well with the observed giant electrostriction-like response. These films show large coefficient of thermal expansion (2.36 × 10 −5 /K), which along with the giant M 31 implies a considerable increase in the lattice anharmonicity induced by the defects. Our work provides a crucial step forward towards formulating guidelines to engineer large electromechanical responses even at higher frequencies in lead-free thin films. Lead-free piezoelectric materials with large electromechanical responses are important for nano electromechanical systems devices. Here the authors defect engineer Si integrated BaTiO3 to enhance the electromechanical response and report a large electrostrictive response at frequencies