Extended wavelength and enhanced sensitivity of PbS colloidal quantum dots/Bi2Te3 photodetector by band alignment engineering

[Display omitted] •Wavelength extension of the photodetector is realized by the synergistic effect of PbS colloidal quantum dots and Bi2Te3.•The photodetector demonstrates a broadband response from ultraviolet (UV) to short-wave infrared (SWIR).•High responsivity of ~161 A/W and detectivity of ~3.2 ...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Materials & design 2023-05, Vol.229, p.111934, Article 111934
Hauptverfasser: Yu, Lijing, Tian, Pin, Tang, Libin, Hao, Qun, Teng, Kar Seng, Zhong, Hefu, Zuo, Wenbin, Ji, Yulong, Li, Hongfu, Li, Zhihua, Ma, Qi, Yang, Min, Yu, Lianjie
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:[Display omitted] •Wavelength extension of the photodetector is realized by the synergistic effect of PbS colloidal quantum dots and Bi2Te3.•The photodetector demonstrates a broadband response from ultraviolet (UV) to short-wave infrared (SWIR).•High responsivity of ~161 A/W and detectivity of ~3.2 × 1013 Jones at 1050 nm are obtained by band alignment engineering. The tunable band gap of PbS colloidal quantum dots (CQDs) from ultraviolet (UV) to short-wave infrared (SWIR) bands provides many potential applications in optoelectronics. However, synthesis of large-sized CQDs that exhibit good stability and sensitivity for extended wavelength still remains a technological challenge. In this paper, a novel broadband photodetector based on small size PbS CQDs (with exciton absorption peak at 927 nm) and Bi2Te3 (with wide spectral sensitivity and high absorption) was developed and studied. The device, which comprised of ITO/AZO/PbS CQDs/Bi2Te3/Al, provided an excellent band alignment that facilitated charge dissociation and transmission hence improving the device sensitivity. Furthermore, wavelength extension was also realized through the synergistic effect of these materials, thus demonstrating broadband photodetection with high sensitivity. The heterostructure photodetector demonstrated good performance in the visible and near infrared ranges, especially at a wavelength of 1050 nm exhibiting a high responsivity (R) and detectivity (D*) of 161 A/W and 3.2 × 1013 Jones, respectively. In addition, the device exhibited excellent stability and reversibility after one month of storage without any encapsulation. This work lays a good foundation for the construction of the next generation of highly sensitive broadband CQDs photodetectors.
ISSN:0264-1275
DOI:10.1016/j.matdes.2023.111934