Thermoluminescence Studies of Proton-Irradiated Cr‑, Mg-Codoped β‑Ga2O3

Chromium-doped Ga2O3, with intense Cr3+-related red-infrared light emission, is a promising semiconductor material for optical sensors. This work constitutes a comprehensive study of the thermoluminescence properties of Cr-, Mg-codoped β-Ga2O3 single crystals, both prior to and after proton irradiation. The thermoluminescence investigation includes a thorough analysis of measurements with different β− irradiation doses used to populate the trap levels, with preheating steps to disentangle overlapping peaks (T M-T STOP and initial rise methods) and finally by computationally fitting to a theoretical expression. At least three traps with activation energies of 0.84, 1.0, and 1.1 eV were detected. By comparison with literature reports, they can be assigned to different defect complexes involving oxygen vacancies and/or common contaminants/dopants. Interestingly, the thermoluminescence signal is enhanced by the proton irradiation while the type of traps is maintained. Finally, the pristine glow curve was recovered on the irradiated samples after an annealing step at 923 K for 10 s. These results contribute to a better understanding of the defect levels in Cr-, Mg-codoped β-Ga2O3 and show that electrons released from these traps lead to Cr3+-related light emission that can be exploited in dosimetry applications.