Non-collinear magnetic configuration mediated exchange coupling at the interface of antiferromagnet and rare-earth nanolayers

Mn 3 Ir/CoFe bilayer is a prototypical exchange-coupled antiferromagnet (AF)–ferromagnet (FM) system. Nevertheless, a strong exchange coupling between FM and rare-earth(RE) interfaces of Fe/Dy and Fe/Tb has been established earlier. Strong coupling at the FM–RE interface originates from the number o...

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Veröffentlicht in:Scientific reports 2022-12, Vol.12 (1), p.21836-16, Article 21836
Hauptverfasser: Huang, Junyu, Liu, Chang, Cui, Yifan, Ling, Yuxiang, Chen, Keming, Zhao, Kunlong, Xiao, Xiangshang, Yuan, Bin, Paul, Amitesh
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Sprache:eng
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Zusammenfassung:Mn 3 Ir/CoFe bilayer is a prototypical exchange-coupled antiferromagnet (AF)–ferromagnet (FM) system. Nevertheless, a strong exchange coupling between FM and rare-earth(RE) interfaces of Fe/Dy and Fe/Tb has been established earlier. Strong coupling at the FM–RE interface originates from the number of irreversible spins owing to the imbalance in the non-collinear configuration in RE. However, exchange coupling between AF–RE could not be established due to the minimal number of irreversible spins in AF and RE. A frustrated inter-domain magnetic interaction leads to the coexistence of spin-freezing-like ordering around the temperature range of helical spin modulation at the exchange-coupled interfaces of RE-based specimens. To overcome the lack of coupling between the AF–RE interface, we use a sandwich structure of AF–FM–RE layers (Mn 3 Ir/CoFe/Dy) as we demonstrate establishing considerable exchange bias in the system. Changing the bias direction during field cooling introduces possible differences in non-collinear directions (helicities), which affects the number of irreversible spins and consequent exchange coupling differently for opposite directions. The non-collinear structures in RE are topologically stable; thus, their directions of orientation can be regarded as an additional degree of freedom, which can be manipulated in all-spin-based technology.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-022-26407-4