Multi‐Operating Mode Field‐Effect Transistors Based on SnO/SnS Heterostructures and CMOS‐Like Inverter Applications

A novel SnO/SnS heterojunction grown by pulsed laser deposition for the fabrication of high‐performance transistors with changeable polarity is described in this study. It is worth noting that the operating mode of a vertical heterojunction transistor can be switched from p‐type to ambipolar to n‐type by growing SnS with a different thickness on SnO with ambipolarity. The p‐type mobility could reach 1.77 cm2 V−1 s−1 and the switching ratio could reach 1517. The ambipolar transistor shows a V‐type transfer curve with electron channel mobility and hole mobility, respectively. The cross‐sectional transmission electron microscopy of the heterojunction interface reveals a high level of quality, which explains the method by which the working mode of the heterojunction changes. In addition, complementary metal‐oxide‐semiconductor (CMOS) inverters are successfully used with p‐type SnO transistors, n‐type SnO/SnS transistors, and ambipolar transistors. This work proposes a novel approach to preparing CMOS electrical components, as well as a new working mode for transistors, that are both simple and efficient. The unexplored heterostructures composed of SnO and SnS with controlled thickness are successfully deposited by the pulsed laser deposition technique. The SnO/SnS heterojunction transistors exhibit the transition of operation mode from p‐type to ambipolar to n‐type, which shows the unique potential in the complementary metal‐oxide‐semiconductor‐like inverters.