Solar-blind photonic integrated chips for real-time on-chip communication

The monolithically integrated self-driven photoelectric detector (PD) with the light-emitting diode (LED) epitaxial structure completely relies on the built-in electric field in the multi-quantum wells region to separate the photogenerated carriers. Here, we propose a novel superlattices–electron ba...

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Veröffentlicht in:APL photonics 2024-07, Vol.9 (7), p.076104-076104-9
Hauptverfasser: He, Rui, Song, Yijian, Liu, Naixin, Chen, Renfeng, Wu, Jin, Wang, Yufeng, Hu, Qiang, Chen, Xiongbin, Wang, Junxi, Li, Jinmin, Wei, Tongbo
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Sprache:eng
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Zusammenfassung:The monolithically integrated self-driven photoelectric detector (PD) with the light-emitting diode (LED) epitaxial structure completely relies on the built-in electric field in the multi-quantum wells region to separate the photogenerated carriers. Here, we propose a novel superlattices–electron barrier layer structure to expand the potential field region and enhance the detection capability of the integrated PD. The PD exhibits a record-breaking photo-to-dark current ratio of 5.14 × 107, responsivity of 110.3 A/W, and specific detectivity of 2.2 × 1013 Jones at 0 V bias, respectively. A clear open-eyed diagram of the monolithically integrated chip, including the PD, LED, and waveguide, is realized under a high-speed communication rate of 150 Mbps. The obtained transient response (rise/decay) time of 2.16/2.28 ns also illustrates the outstanding transient response capability of the integrated chip. The on-chip optical communication system is built to achieve the practical video signals transmission application, which is a formidable contender for the core module of future large-scale photonic integrated circuits.
ISSN:2378-0967
2378-0967
DOI:10.1063/5.0206657