A new AlGaAs/GaAs/InGaAs lasing switch grown by MBE

A quantum well optoelectronic switch (QWOES) based on regenerative loop of potential barrier lowering resulted from the forward biased pn junction is demonstrated in a AlGaAs/GaAs/InGaAs double heterostructure. Excellent electrical switching characteristics with a high voltage control efficiency η (...

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Veröffentlicht in:	Active and passive electronic components 2001, Vol.23 (4), p.231-236
Hauptverfasser:	MING RONG LEE, YARN, K. F, CHANG, W. R
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Zusammenfassung:	A quantum well optoelectronic switch (QWOES) based on regenerative loop of potential barrier lowering resulted from the forward biased pn junction is demonstrated in a AlGaAs/GaAs/InGaAs double heterostructure. Excellent electrical switching characteristics with a high voltage control efficiency η (= V S /V H ) of 6.8 have been obtained when the device is operated in the dark. Typical OFF‐and ON‐state resistances are 120 kΩ, 25 Ω, respectively. A lasing threshold current density, front slope efficiency and external differential quantum efficiency measured in as‐cleaved device are 210 A/cm, 0.4mW/mA and 31.4%, respectively. The peak emission wavelength is centered at about 974 nm.
ISSN:	0882-7516 1563-5031
DOI:	10.1155/APEC.23.231