Research methods of reliability indicators of rectifier diode in tablet execution

Research methods of reliability indicators of rectifier diode in tablet execution

A new forecast approach for the reliability of power semiconductor devices in cyclic operation on the basis of numerical analysis of nonuniform temperature fields is offered. We compared the failure rates of semiconductor power devices in real thermal regime with the thermal conductivity of the stat...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Rinat, Kurmangaliev, Evgeny, Kravchenko
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Devices
Diodes
Failure analysis
Failure rates
Nonuniform
Numerical analysis
Power semiconductor devices
Rectifiers
Reliability
Semiconductors
Tablets
Thermal conductivity
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Beschreibung
Zusammenfassung:A new forecast approach for the reliability of power semiconductor devices in cyclic operation on the basis of numerical analysis of nonuniform temperature fields is offered. We compared the failure rates of semiconductor power devices in real thermal regime with the thermal conductivity of the statistical data.
ISSN:2100-014X
2101-6275
2100-014X
DOI:10.1051/epjconf/20158201030