Mechanical Motion Tuned Carrier Transport Characteristic of Dynamic Diode

Since the invention of the dynamic diode, its physical properties and potential applications have attracted wide attention. Lots of attempts are made to harvest the rebounding current and voltage of the dynamic diode. However, the underlying physical mechanism of its carrier transport characteristic is rarely explored carefully. Here, the electrical transport properties of the dynamic diode are systematically investigated with a mechanical motion‐tuned method, where the dynamic current‐voltage (I‐V) curve shows a gentler growth trend compared to the static curve. The rebounding current increases with motion velocity and contact force, resulting in a reduced current with the same bias voltage and an oscillation current with a changing velocity and force. This study shows a physical picture of adjusting microscopic carrier motion with macroscopic mechanical motion, which provides strong theoretical support for designing dynamic diode devices with better performance in the future. The dynamic diode structure has attracted wide attention because of its physical properties and potential applications. In this study, the physical mechanism of carrier transport inside the dynamic diode is explored based on metal/semiconductor structure. A circuit model of an ideal dynamic diode is proposed by studying the current–voltage response of the device at a bias voltage.