Investigation of structural, electrokinetic and energy state properties of the semiconductive Zr1-xVxNiSn solid solution

Structural, electrokinetic and energy state characteristics of the Zr1-xVxNiSn semiconductive solid solution (х=0–0.10) were investigated in the temperature interval 80–400 К. It was shown that doping of the ZrNiSn compound by V atoms (rV=0.134 nm) due to substitution of Zr (rZr=0.160 nm) results in...

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Veröffentlicht in:Fìzika ì hìmìâ tverdogo tìla (Online) 2019-04, Vol.20 (1), p.33-39
Hauptverfasser: Romaka, V., Romaka, L., Stadnyk, Y., Horyn, A., Krayovskyy, V., Romaniv, I., Garanuyk, P.
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Sprache:eng
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Zusammenfassung:Structural, electrokinetic and energy state characteristics of the Zr1-xVxNiSn semiconductive solid solution (х=0–0.10) were investigated in the temperature interval 80–400 К. It was shown that doping of the ZrNiSn compound by V atoms (rV=0.134 nm) due to substitution of Zr (rZr=0.160 nm) results in increase of lattice parameter а(х) of Zr1-xVxNiSn indicating unforecast structural change. Based on analysis of the motion rate of the Fermi level ΔεF/Δх for Zr1-xVxNiSn in direction of the conduction band it was concluded about simultaneous generation of the structural defects of the donor and acceptor nature (donor-acceptor pairs) by unknown mechanism and creation of the corresponding energy levels in the band gap of the semiconductor.
ISSN:1729-4428
2309-8589
DOI:10.15330/pcss.20.1.39