Reflectivity in Bragg Mirrors of AlGaAsSb/AlAsSb on InP

Reflectivity in Bragg Mirrors of AlGaAsSb/AlAsSb on InP

The reflectivity of a Bragg mirror composed by materials of the antimony family (AlGaAsSb/AlAsSb), doped with tellurium, is analyzed in this work. The sample was prepared by molecular beam epitaxy (MBE) and the reflectivity was measured by Fourier Transform Infra-Red Spectroscopy (FTIR). In order to...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semina. Ciências exatas e tecnológicas 2003-01, Vol.24 (1), p.69-84
Hauptverfasser: Jean C. Harmand, Bernard Nabet, Edson Laureto, Luiz Carlos Poças, José Leonil Duarte, Sidney Alves Lourenço, Ivan Frederico Lupiano Dias, Dari de Oliveira Toginho Filho
Format: Artikel
Sprache:eng
Schlagworte:
AlAsSb
AlGaAsSb
Bragg mirror
Reflectance
Semiconductors
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The reflectivity of a Bragg mirror composed by materials of the antimony family (AlGaAsSb/AlAsSb), doped with tellurium, is analyzed in this work. The sample was prepared by molecular beam epitaxy (MBE) and the reflectivity was measured by Fourier Transform Infra-Red Spectroscopy (FTIR). In order to discuss the Bragg mirror properties, the experimental reflectivity is compared to a simulation of the reflectivity based on the matrix formalism.
ISSN:1676-5451
1679-0375