INFLUENCE OF THERMAL TREATMENT ON THE ELECTRONIC PROPERTIES OF ITO THIN FILMS OBTAINED BY RF CATHODIC PULVERIZATION. STUDY OF SOLAR CELLS BASED ON SILICON/ (RF SPUTTERED) ITO JUNCTIONS

INFLUENCE OF THERMAL TREATMENT ON THE ELECTRONIC PROPERTIES OF ITO THIN FILMS OBTAINED BY RF CATHODIC PULVERIZATION. STUDY OF SOLAR CELLS BASED ON SILICON/ (RF SPUTTERED) ITO JUNCTIONS

ITO (Indium Tin Oxide) thin films obtained by R.F cathodic sputtering have been studied. The influence of thermal treatment on the electronic properties of the films has been particularly investigated. Electrical measurements were performed between 95 and 600 K. Free carriers concentration in the fi...

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Veröffentlicht in:Active and Passive Electronic Components 1991, Vol.1991 (3), p.151-161
Hauptverfasser: CAMPET, G, GEOFFROY, C, WEN, S. J, PORTIER, J, KEOU, P, SALARDENNE, J, SUN, Z. W
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Zusammenfassung:ITO (Indium Tin Oxide) thin films obtained by R.F cathodic sputtering have been studied. The influence of thermal treatment on the electronic properties of the films has been particularly investigated. Electrical measurements were performed between 95 and 600 K. Free carriers concentration in the film were measured by Hall effect coefficient. Optical indices were determined by computer drawing of charts allowing to simplify Manifacier method.
ISSN:0882-7516
1563-5031
DOI:10.1155/1991/47924