THREE-DIMENSIONAL MAGNETOMETER BASED ON HALL SENSORS INTEGRATED IN STANDARD CMOS TECHNOLOGY
The results of the device simulation of a three-dimensional magnetometer based on Hall sensors integrated in a standard CMOS technology are presented. The Hall voltage vs magnetic field, Hall voltage vs magnetic field deviation angle, and sensitivity vs temperature curves were measured. The first-pr...
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Veröffentlicht in: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki 2019-06 (7), p.167-171 |
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Format: | Artikel |
Sprache: | rus |
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Zusammenfassung: | The results of the device simulation of a three-dimensional magnetometer based on Hall sensors integrated in a standard CMOS technology are presented. The Hall voltage vs magnetic field, Hall voltage vs magnetic field deviation angle, and sensitivity vs temperature curves were measured. The first-principles simulation of chalcogenide spinel CuCr2Se4 used in creation of a magnetic field concentrator was performed. |
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ISSN: | 1729-7648 |