THREE-DIMENSIONAL MAGNETOMETER BASED ON HALL SENSORS INTEGRATED IN STANDARD CMOS TECHNOLOGY

The results of the device simulation of a three-dimensional magnetometer based on Hall sensors integrated in a standard CMOS technology are presented. The Hall voltage vs magnetic field, Hall voltage vs magnetic field deviation angle, and sensitivity vs temperature curves were measured. The first-pr...

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Veröffentlicht in:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki 2019-06 (7), p.167-171
Hauptverfasser: D. HA. Dao, V. S. Volchek, M. S. Baranava, I. Yu. Lovshenko, D. C. Hvazdouski, V. R. Stempitsky
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Sprache:rus
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Zusammenfassung:The results of the device simulation of a three-dimensional magnetometer based on Hall sensors integrated in a standard CMOS technology are presented. The Hall voltage vs magnetic field, Hall voltage vs magnetic field deviation angle, and sensitivity vs temperature curves were measured. The first-principles simulation of chalcogenide spinel CuCr2Se4 used in creation of a magnetic field concentrator was performed.
ISSN:1729-7648