Room temperature nonlocal detection of charge-spin interconversion in a topological insulator
Topological insulators (TIs) are emerging materials for next-generation low-power nanoelectronic and spintronic device applications. TIs possess non-trivial spin-momentum locking features in the topological surface states in addition to the spin-Hall effect (SHE), and Rashba states due to high spin-...
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Veröffentlicht in: | NPJ 2D materials and applications 2024-02, Vol.8 (1), p.10-8, Article 10 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Topological insulators (TIs) are emerging materials for next-generation low-power nanoelectronic and spintronic device applications. TIs possess non-trivial spin-momentum locking features in the topological surface states in addition to the spin-Hall effect (SHE), and Rashba states due to high spin-orbit coupling (SOC) properties. These phenomena are vital for observing the charge-spin conversion (CSC) processes for spin-based memory, logic and quantum technologies. Although CSC has been observed in TIs by potentiometric measurements, reliable nonlocal detection has so far been limited to cryogenic temperatures up to
T
= 15 K. Here, we report nonlocal detection of CSC and its inverse effect in the TI compound Bi
1.5
Sb
0.5
Te
1.7
Se
1.3
at room temperature using a van der Waals heterostructure with a graphene spin-valve device. The lateral nonlocal device design with graphene allows observation of both spin-switch and Hanle spin precession signals for generation, injection and detection of spin currents by the TI. Detailed bias- and gate-dependent measurements in different geometries prove the robustness of the CSC effects in the TI. These findings demonstrate the possibility of using topological materials to make all-electrical room-temperature spintronic devices. |
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ISSN: | 2397-7132 2397-7132 |
DOI: | 10.1038/s41699-024-00447-y |