Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates

We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In0.6Al0.4As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The comparison between the quantum elec...

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Veröffentlicht in:	Nanomaterials (Basel, Switzerland) Switzerland), 2022-10, Vol.12 (20), p.3571
Hauptverfasser:	Tuktamyshev, Artur, Vichi, Stefano, Cesura, Federico Guido, Fedorov, Alexey, Carminati, Giuseppe, Lambardi, Davide, Pedrini, Jacopo, Vitiello, Elisa, Pezzoli, Fabio, Bietti, Sergio, Sanguinetti, Stefano
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Arsenic Buffer layers Capping droplet epitaxy Emission analysis Emissions Epitaxy III–V semiconductors Indium Indium arsenides metamorphic buffer layer Misfit dislocations Morphology Numerical analysis Optical properties Properties quantum dot Quantum dots Self-assembly Strain relaxation Structure Substrates Symmetry
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Zusammenfassung:	We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In0.6Al0.4As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The comparison between the quantum electronic calculations of the optical transitions and the emission properties of the quantum dots highlights the presence of a strong quenching of the emission from larger quantum dots. Detailed analysis of the surface morphology during the capping procedure show the presence of a critical size over which the quantum dots are plastically relaxed.
ISSN:	2079-4991 2079-4991
DOI:	10.3390/nano12203571