Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer

The full utilization of two-dimensional transition metal dichalcogenides (2D TMDCs) faces several challenges, among which is realizing uniform material deposition on the 2D surface. Typical strategies to enable material growth lead to a poor interface quality, degrading the 2D TMDC’s properties. In...

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Veröffentlicht in:NPJ 2D materials and applications 2024-03, Vol.8 (1), p.25-11, Article 25
Hauptverfasser: Wyndaele, P.-J., de Marneffe, J.-F., Sergeant, S., de la Rosa, C. J. L., Brems, S., Caro, A. M., De Gendt, S.
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Sprache:eng
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Zusammenfassung:The full utilization of two-dimensional transition metal dichalcogenides (2D TMDCs) faces several challenges, among which is realizing uniform material deposition on the 2D surface. Typical strategies to enable material growth lead to a poor interface quality, degrading the 2D TMDC’s properties. In this work, a sacrificial, graphene oxide-based seeding layer is used (1) as passivation layer, protecting the underlying 2D TMDC and (2) as nucleation layer, enabling uniform material growth. Graphene is transferred on monolayer WS 2 , establishing a high-quality van der Waals interface. After transfer, the polymeric residues on graphene are cleaned via a combination of wet- and dry treatments and functionalized via dry UV/O 3 oxidation. The rate of graphene oxidation is shown to be substrate dependent, which is explained by UV light-induced ultrafast charge transfer between the graphene and WS 2 monolayer. The carbon-oxygen functionalities serve as nucleation sites in a subsequent HfO 2 ALD process, achieving more uniform dielectric growth and faster layer closure compared to direct deposition. The graphene-based nucleation- / passivation approach offers adaptability, allowing for tailored surface chemistry to enable any alternative material growth, while maintaining a prefect van der Waals interface.
ISSN:2397-7132
2397-7132
DOI:10.1038/s41699-024-00464-x