Defect-driven antiferromagnetic domain walls in CuMnAs films

Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning X-ray diffraction imaging and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects. We demonstrate that microtwin defects, which develop across the entire thickness of the film and terminate on the surface as characteristic lines, determine the location and orientation of 180 ∘ and 90 ∘ domain walls. The results emphasize the crucial role of nanoscale crystalline defects in determining the AF domains and domain walls, and provide a route to optimizing device performance. Antiferromagnets offer the potential for higher speed and density than ferromagnetic materials for spintronic devices. Here, Reimers et al study the domain structure of CuMnAs, demonstrating the role of defects in stabilizing the location and orientation of antiferromagnetic domain walls.