Entangling gates on degenerate spin qubits dressed by a global field
Semiconductor spin qubits represent a promising platform for future large-scale quantum computers owing to their excellent qubit performance, as well as the ability to leverage the mature semiconductor manufacturing industry for scaling up. Individual qubit control, however, commonly relies on spect...
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Veröffentlicht in: | Nature communications 2024-09, Vol.15 (1), p.7656-7, Article 7656 |
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Zusammenfassung: | Semiconductor spin qubits represent a promising platform for future large-scale quantum computers owing to their excellent qubit performance, as well as the ability to leverage the mature semiconductor manufacturing industry for scaling up. Individual qubit control, however, commonly relies on spectral selectivity, where individual microwave signals of distinct frequencies are used to address each qubit. As quantum processors scale up, this approach will suffer from frequency crowding, control signal interference and unfeasible bandwidth requirements. Here, we propose a strategy based on arrays of degenerate spins coherently dressed by a global control field and individually addressed by local electrodes. We demonstrate simultaneous on-resonance driving of two degenerate qubits using a global field while retaining addressability for qubits with equal Larmor frequencies. Furthermore, we implement SWAP oscillations during on-resonance driving, constituting the demonstration of driven two-qubit gates. Significantly, our findings highlight how dressing can overcome the fragility of entangling gates between superposition states and increase their noise robustness. These results constitute a paradigm shift in qubit control in order to overcome frequency crowding in large-scale quantum computing.
Global control of a qubits using a single microwave field is a promising strategy for scalable quantum computing. Here the authors demonstrate individual addressability vial local electrodes and two-qubit gates in an array of Si quantum dot spin qubits dressed by a global microwave field and driven on-resonance. |
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ISSN: | 2041-1723 2041-1723 |
DOI: | 10.1038/s41467-024-52010-4 |