Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system

Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system

This article presents an automated test system targeting the large-scale analysis of ultra-thin MOS gate dielectric degradation. The system allows for stress tests at elevated temperatures as well as supply voltages and long-term tests of thousands of MOS devices simultaneously. The aim is to build-...

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Veröffentlicht in:Advances in radio science 2008-05, Vol.6 (1), p.205-207
Hauptverfasser: Domdey, A, Hafkemeyer, K. M, Krautschneider, W. H, Schroeder, D
Format: Artikel
Sprache:eng
Schlagworte:
Analysis
Dielectrics
Testing equipment
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Beschreibung
Zusammenfassung:This article presents an automated test system targeting the large-scale analysis of ultra-thin MOS gate dielectric degradation. The system allows for stress tests at elevated temperatures as well as supply voltages and long-term tests of thousands of MOS devices simultaneously. The aim is to build-up large and hence significant statistics about the degradation process as a function of time.
ISSN:1684-9973
1684-9965
1684-9973
DOI:10.5194/ars-6-205-2008