Large-Signal RF Modeling with the EKV3 MOSFET Model

Large-Signal RF Modeling with the EKV3 MOSFET Model

This paper presents a validation of the EKV3 MOSFET model under load-pull conditions with high input power at 5.8 GHz, as well as S-parameter measurements with low input power up to 20 GHz. The EKV3 model is able to represent coherently the large- and small-signal RF characteristics in advanced 90 n...

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Veröffentlicht in:Journal of Telecommunications and Information Technology 2023-06 (1), p.29-33
Hauptverfasser: Chalkiadaki, Maria-Anna, Bucher, Matthias
Format: Artikel
Sprache:eng
Schlagworte:
compact model
EKV3 model
large-signal
loadpull
MOSFET model
radio frequency
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Zusammenfassung:This paper presents a validation of the EKV3 MOSFET model under load-pull conditions with high input power at 5.8 GHz, as well as S-parameter measurements with low input power up to 20 GHz. The EKV3 model is able to represent coherently the large- and small-signal RF characteristics in advanced 90 nm CMOS technology. Multifinger devices with nominal drawn gate length of 70 nm are used.
ISSN:1509-4553
1899-8852
DOI:10.26636/jtit.2010.1.1060