Electrophysical Properties of PZT-Type Ceramics Obtained by Two Sintering Methods

This study demonstrates the impact of two sintering techniques on the fundamental properties of doped PZT-type ceramic materials (with Mn4+, Sb3+, Gd3+, and W6+), with the general chemical formula Pb(Zr0.49Ti0.51)0.94Mn0.021Sb0.016Gd0.012W0.012O3. The synthesis of ceramic powders was carried out through the calcination method. Two different methods were used in the final sintering process: (i) pressureless sintering (PS) and (ii) hot pressing (HP). The PZT-type ceramics were subjected to electrophysical measurements, encompassing various analyses such as X-ray diffraction (XRD), microstructure (scanning electron microscopy (SEM)), ferroelectric and dielectric properties, and DC electrical conductivity. The analysis of the crystal structure at room temperature showed that the material belongs to the perovskite structure from the tetragonal phase (P4mm space group) without foreign phases. Both sintering methods ensure obtaining the material with appropriate dielectric and ferroelectric parameters, and the tests carried out verified that the ceramic materials have a diverse range of parameters appropriate for use in micromechatronic and microelectronic applications. The obtained ceramic material has high permittivity values, low dielectric loss tangent values, and high resistance. At room temperature, the ceramic samples’ P-E hysteresis loops do not saturate at a field of 3.5 kV/mm (Pm maximum polarization is in the range from 12.24 to 13.47 μC/cm2). However, at higher temperatures, the P-E hysteresis loops become highly saturated, and, at 110 °C, the Pm maximum polarization values are in the range from 28.02 to 30.83 μC/cm2.