Computation of Several Banhatti and Reven Invariants of Silicon Carbides

Expressions for the molecular topological features of silicon carbide compounds are essential for quantitative structure-property and structure-activity interactions. Chemical Graph Theory is a subfield of computational chemistry that investigates topological indices of molecular networks that corre...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Majallat Baghdād lil-ʻulūm 2023-01, Vol.20 (3(Suppl.)), p.1099
Hauptverfasser: Mahboob, Abid, Rasheed, Muhammad Waheed, Bayati, Jalal Hatem Hussein, Hanif, Iqra
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Expressions for the molecular topological features of silicon carbide compounds are essential for quantitative structure-property and structure-activity interactions. Chemical Graph Theory is a subfield of computational chemistry that investigates topological indices of molecular networks that correlate well with the chemical characteristics of chemical compounds. In the modern age, topological indices are extremely important in the study of graph theory. Topological indices are critical tools for understanding the core topology of chemical structures while examining chemical substances. In this article, compute the first and second k-Banhatti index, modified first and second k-Banhatti index, first and second k-hyper Banhatti index, first and second hyper Revan indices, first Revan vertex index, and third Revan index for Silicon Carbide SiC4-II [p, q] for all values of p and q
ISSN:2078-8665
2411-7986
DOI:10.21123/bsj.2023.8212