Photovoltaic field effect transistor (PVFET)-based Ge/Si photodetector for low-power silicon photonics

Photovoltaic field effect transistor (PVFET)-based Ge/Si photodetector for low-power silicon photonics

We propose a Ge/Si photodetector based upon photovoltaic field effect transistor (PVFET) for low-power silicon photonics. The device realizes detection by modulating the conductivity of the FET channel through photo-induced gate voltage, exhibiting ultra-high responsivity. The responsivity can reach...

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Veröffentlicht in:AIP advances 2019-08, Vol.9 (8), p.085226-085226-7
Hauptverfasser: Zeng, Q. Y., Pan, Z. X., Zeng, Z. H., Liu, J. C., Liu, X. Y., Chen, Z. T., Gong, Z.
Format: Artikel
Sprache:eng
Schlagworte:
Dark current
Field effect transistors
Germanium
Photometers
Photonics
Semiconductor devices
Silicon
Transistors
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Zusammenfassung:We propose a Ge/Si photodetector based upon photovoltaic field effect transistor (PVFET) for low-power silicon photonics. The device realizes detection by modulating the conductivity of the FET channel through photo-induced gate voltage, exhibiting ultra-high responsivity. The responsivity can reach about 104 A/W at operating voltages lower than 1.5 V. Furthermore, its light-to-dark (on/off) current ratio and temporal response characteristics are studied numerically. A maximum on/off ratio up to 193 can be obtained by optimizing the doping concentration of Ge gate.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5100039