Band-Gap Nonlinearity in Lead Chalcogenide (PbQ, Q = Te, Se, S) Alloys
Narrow band-gap lead chalcogenides have been developed for several optical and electronic applications. However, band-gap energies of the ternary and quaternary alloys have received little attention compared with the parent binary phases. Here, we have fabricated single-phase ternary (PbTe)1–x (PbSe...
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Veröffentlicht in: | ACS omega 2017-07, Vol.2 (7), p.3417-3423 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Narrow band-gap lead chalcogenides have been developed for several optical and electronic applications. However, band-gap energies of the ternary and quaternary alloys have received little attention compared with the parent binary phases. Here, we have fabricated single-phase ternary (PbTe)1–x (PbSe) x and quaternary (PbTe)0.9–y (PbSe)0.1(PbS) y and (PbTe)0.65–z (PbSe)0.35(PbS) z alloys and shown that although lattice parameters follow Vegard’s law as a function of composition, the band-gap energies exhibit a substantial bowing effect. The ternary (PbTe)1–x (PbSe) x system features a smaller bowing parameter predominantly due to the difference in electronegativity between Se and Te, whereas the larger bowing parameters in quaternary alloys are generated from a larger crystal lattice mismatch and larger miscibility gap. These findings can lead to further advances in tuning the band-gap and lattice parameters for optical and electronic applications of lead chalcogenides. |
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ISSN: | 2470-1343 2470-1343 |
DOI: | 10.1021/acsomega.7b00539 |