Band-Gap Nonlinearity in Lead Chalcogenide (PbQ, Q = Te, Se, S) Alloys

Narrow band-gap lead chalcogenides have been developed for several optical and electronic applications. However, band-gap energies of the ternary and quaternary alloys have received little attention compared with the parent binary phases. Here, we have fabricated single-phase ternary (PbTe)1–x (PbSe...

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Veröffentlicht in:ACS omega 2017-07, Vol.2 (7), p.3417-3423
Hauptverfasser: Aminorroaya Yamini, Sima, Patterson, Vaughan, Santos, Rafael
Format: Artikel
Sprache:eng
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Zusammenfassung:Narrow band-gap lead chalcogenides have been developed for several optical and electronic applications. However, band-gap energies of the ternary and quaternary alloys have received little attention compared with the parent binary phases. Here, we have fabricated single-phase ternary (PbTe)1–x (PbSe) x and quaternary (PbTe)0.9–y (PbSe)0.1(PbS) y and (PbTe)0.65–z (PbSe)0.35(PbS) z alloys and shown that although lattice parameters follow Vegard’s law as a function of composition, the band-gap energies exhibit a substantial bowing effect. The ternary (PbTe)1–x (PbSe) x system features a smaller bowing parameter predominantly due to the difference in electronegativity between Se and Te, whereas the larger bowing parameters in quaternary alloys are generated from a larger crystal lattice mismatch and larger miscibility gap. These findings can lead to further advances in tuning the band-gap and lattice parameters for optical and electronic applications of lead chalcogenides.
ISSN:2470-1343
2470-1343
DOI:10.1021/acsomega.7b00539