Contact Engineering Approach to Improve the Linearity of Multilevel Memristive Devices

Physical mechanisms underlying the multilevel resistive tuning over seven orders of magnitude in structures based on TiO /Al O bilayers, sandwiched between platinum electrodes, are responsible for the nonlinear dependence of the conductivity of intermediate resistance states on the writing voltage. To improve the linearity of the electric-field resistance tuning, we apply a contact engineering approach. For this purpose, platinum top electrodes were replaced with aluminum and copper ones to induce the oxygen-related electrochemical reactions at the interface with the Al O switching layer of the structures. Based on experimental results, it was found that electrode material substitution provokes modification of the physical mechanism behind the resistive switching in TiO /Al O bilayers. In the case of aluminum electrodes, a memory window has been narrowed down to three orders of magnitude, while the linearity of resistance tuning was improved. For copper electrodes, a combination of effects related to metal ion diffusion with oxygen vacancies driven resistive switching was responsible for a rapid relaxation of intermediate resistance states in TiO /Al O bilayers.