Investigation into the Characteristics of Double-Layer Transparent Conductive Oxide ITO/TNO Anti-Reflection Coating for Silicon Solar Cells

In this study, indium–tin oxide (ITO)/Nb-doping TiO2 (TNO) double-layer transparent conductive oxide (TCO) films deposited using DC magnetron sputtering were used as a surface anti-reflection layer with an overall thickness of 100 nm for double-layer films. The simulated results showed that ITO and...

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Veröffentlicht in:Crystals (Basel) 2023-01, Vol.13 (1), p.80
Hauptverfasser: Lee, Yih-Shing, Chuang, Li-Yang, Tang, Cheng-Jia, Yan, Zi-Zhu, Le, Bing-Shin, Jaing, Cheng-Chung
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Sprache:eng
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Zusammenfassung:In this study, indium–tin oxide (ITO)/Nb-doping TiO2 (TNO) double-layer transparent conductive oxide (TCO) films deposited using DC magnetron sputtering were used as a surface anti-reflection layer with an overall thickness of 100 nm for double-layer films. The simulated results showed that ITO and TNO thickness combinations of 90 nm/10 nm, 80 nm/20 nm, and 70 nm/30 nm had a higher transmittance and lower reflectance than others in the visible wavelength range. Compared to the single-layer ITO films, for ITO/TNO films deposited on the glass and silicon substrates with an optimum thickness of 80/20 nm, the reflectance was reduced by 5.06% and 4.63%, respectively, at the central wavelength of 550 nm and crystalline silicon photo response wavelength of 900 nm. Moreover, the near-infrared reflectance of the double-layer ITO/TNO with thickness combinations of 90 nm/10 nm, 80 nm/20 nm, and 70 nm/30 nm, when deposited on silicon substrates, was obviously improved by the graded refractive index lamination effect of air (1)/ITO (1.98)/TNO (2.41)/Si (3.9).
ISSN:2073-4352
2073-4352
DOI:10.3390/cryst13010080