Modelling of an Esaki Tunnel Diode in a Circuit Simulator

Modelling of an Esaki Tunnel Diode in a Circuit Simulator

A method for circuit-level modelling a physically realistic Esaki tunnel diode model is presented. A paramaterisation technique that transforms the strongly nonlinear characteristic of a tunnel diode into two relatively modest nonlinear characteristics is demonstrated. The introduction of an interme...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Active and Passive Electronic Components 2011-01, Vol.2011 (2011), p.126-133
Hauptverfasser: Kriplani, Nikhil M., Bowyer, Stephen, Huckaby, Jennifer, Steer, Michael B.
Format: Artikel
Sprache:eng
Schlagworte:
Algorithms
Circuits
Diodes
Mathematical models
Modelling
Nonlinearity
State variable
Studies
Transforms
Tunnel diodes
Variables
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A method for circuit-level modelling a physically realistic Esaki tunnel diode model is presented. A paramaterisation technique that transforms the strongly nonlinear characteristic of a tunnel diode into two relatively modest nonlinear characteristics is demonstrated. The introduction of an intermediate state variable results in a physically realistic mathematical model that is not only moderately nonlinear and therefore robust, but also single-valued.
ISSN:0882-7516
1563-5031
DOI:10.1155/2011/830182