Tuning the interfacial spin-orbit coupling with ferroelectricity

Detection and manipulation of spin current lie in the core of spintronics. Here we report an active control of a net spin Hall angle, θ SHE (net), in Pt at an interface with a ferroelectric material PZT (PbZr 0.2 Ti 0.8 O 3 ), using its ferroelectric polarization. The spin Hall angle in the ultra-th...

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Veröffentlicht in:Nature communications 2020-05, Vol.11 (1), p.2627-2627, Article 2627
Hauptverfasser: Fang, Mei, Wang, Yanmei, Wang, Hui, Hou, Yusheng, Vetter, Eric, Kou, Yunfang, Yang, Wenting, Yin, Lifeng, Xiao, Zhu, Li, Zhou, Jiang, Lu, Lee, Ho Nyung, Zhang, Shufeng, Wu, Ruqian, Xu, Xiaoshan, Sun, Dali, Shen, Jian
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Sprache:eng
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Zusammenfassung:Detection and manipulation of spin current lie in the core of spintronics. Here we report an active control of a net spin Hall angle, θ SHE (net), in Pt at an interface with a ferroelectric material PZT (PbZr 0.2 Ti 0.8 O 3 ), using its ferroelectric polarization. The spin Hall angle in the ultra-thin Pt layer is measured using the inverse spin Hall effect with a pulsed tunneling current from a ferromagnetic La 0.67 Sr 0.33 MnO 3 electrode. The effect of the ferroelectric polarization on θ SHE (net) is enhanced when the thickness of the Pt layer is reduced. When the Pt layer is thinner than 6 nm, switching the ferroelectric polarization even changes the sign of θ SHE (net). This is attributed to the reversed polarity of the spin Hall angle in the 1 st -layer Pt at the PZT/Pt interface when the ferroelectric polarization is inverted, as supported by the first-principles calculations. These findings suggest a route for designing future energy efficient spin-orbitronic devices using ferroelectric control. The spin Hall angle (SHA) is a measure of the efficiency for converting a charge to a spin current is still challenging to tune in situ. Here, the authors demonstrate by introducing a ferroelectric (FE) material in a ferromagnetic/heavy metal stack the SHA can be voltage controled via the polarization of the FE layer.
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-020-16401-7