Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors

Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors

This paper presents a methodology for the preparation of a -HgI2 by Physical Vapor Transport and of PbI2 crystals using the Bridgman technique. The results of the growth of HgI2 diluted in PbI2 by the Bridgman technique are shown for the first time, its limit of solubility having been determined at...

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Veröffentlicht in:Materials research (São Carlos, São Paulo, Brazil) São Paulo, Brazil), 1999-04, Vol.2 (2), p.75-79
Hauptverfasser: Manoel, E.R., Custódio, M.C.C., Guimarães, F.E.G., Bianchi, R.F., Hernandes, A.C.
Format: Artikel
Sprache:eng
Schlagworte:
crystal growth
ENGINEERING, CHEMICAL
lead iodide
MATERIALS SCIENCE, MULTIDISCIPLINARY
mercuric iodide
METALLURGY & METALLURGICAL ENGINEERING
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Zusammenfassung:This paper presents a methodology for the preparation of a -HgI2 by Physical Vapor Transport and of PbI2 crystals using the Bridgman technique. The results of the growth of HgI2 diluted in PbI2 by the Bridgman technique are shown for the first time, its limit of solubility having been determined at 600 ppm of HgI2 in the PbI2 matrix. Optical absorption, photoluminescence and electrical conductivity measurements show that the crystals prepared are of good crystalline quality.
ISSN:1516-1439
1980-5373
1516-1439
DOI:10.1590/S1516-14391999000200006