Extending the defect tolerance of halide perovskite nanocrystals to hot carrier cooling dynamics

Defect tolerance is a critical enabling factor for efficient lead-halide perovskite materials, but the current understanding is primarily on band-edge (cold) carriers, with significant debate over whether hot carriers can also exhibit defect tolerance. Here, this important gap in the field is addressed by investigating how intentionally-introduced traps affect hot carrier relaxation in CsPbX 3 nanocrystals (X = Br, I, or mixture). Using femtosecond interband and intraband spectroscopy, along with energy-dependent photoluminescence measurements and kinetic modelling, it is found that hot carriers are not universally defect tolerant in CsPbX 3 , but are strongly correlated to the defect tolerance of cold carriers, requiring shallow traps to be present (as in CsPbI 3 ). It is found that hot carriers are directly captured by traps, instead of going through an intermediate cold carrier, and deeper traps cause faster hot carrier cooling, reducing the effects of the hot phonon bottleneck and Auger reheating. This work provides important insights into how defects influence hot carriers, which will be important for designing materials for hot carrier solar cells, multiexciton generation, and optical gain media. The efficiency of lead-halide perovskite photovoltaics is related to the tolerance of their band-edge charge-carriers to point defects. Here, the authors show that this tolerance can be extended to hot carriers depending on the defect energy level.