A molecular ferroelectric thin film of imidazolium perchlorate on silicon

Molecular ferroelectrics have garnered significant attention due to their structural tunability, low synthesis temperature, and high flexibility. Herein, we successfully synthesized imidazole perchlorate (ImClO 4 ) single crystals and high-quality, highly-oriented thin films on Si substrates. These films demonstrated a high inverse piezoelectric coefficient of 55.7 pm/V. Two types of domain bands were observed: type-I bands tilted ~60 ° relative to the horizontal axis, and type-II bands positioned perpendicular to the horizontal axis. Under a + 20 V bias, type-I bands showed a reduction and detachment of 180 ° domain walls to form a needle-like domain. It extended toward the band boundary after applying −20 V bias, which grew along the boundary upon contact. In contrast, type-II bands showed straight domain wall motion and displayed a higher piezoresponse than type-I bands. The growth of high quality molecular ferroelectric thin films on Si substrates paves the way for the development of on-chip devices. Authors report the synthesis of a molecular ferroelectric thin film of imidazolium perchlorate on silicon, holding promise for advanced on-chip electronic devices. They reveal two types of domain wall dynamics with different piezoresponses.