Secondary electron emission from insulators and negative electron affinity semiconductors

This paper investigated R at Epo≥1.0 keV, 1/α, B and δ at Epo≥1.0 keV of insulators and NEA semiconductors with 1.0 keV≤Epom≤10.0 keV. [Display omitted] •Based on the universal formula for primary range R, the characteristics of parameters of R and the values of R at Epo≥10.0 keV and L at Epo≥1.0 keV calculated by ESTAR program, the method of obtaining the formula for R at Epo≥1.0 keV is presented. This study advances the research of secondary electron emission SEE.•Based on the obtained formula for R, experimental δ, relationships among parameters of δ and the processes and characteristics of SEE, the universal formula for δ is deduced and the method of calculating δ at Epo≥1.0 keV of insulators and negative electron affinity NEA semiconductors is presented and experimentally proved. This study advances the applications of SEE.•The methods of calculating 1/α and B of insulators and NEA semiconductors are presented, respectively. The results are analysized. It can be concluded that the methods of calculating 1/α and B are correct, and that any parameter of SEE can not be expressed as a simple formula. Therefore, this study advances the research of SEE. Based on expression of primary range R and the R at Epo ≥ 10.0 keV and L at Epo ≥ 1.0 keV calculated by ESTAR program [1], the method of obtaining formula for R at Epo ≥ 1.0 keV is presented; where Epo is incident energy of primary electron, and L is the energy loss of primary electron per unit path length at the incident surface of the materials. Based on the obtained formula for R, experimental δ, relationships among parameters of δ and the processes and characteristics of secondary electron emission SEE, the universal formula for δ is deduced and the method of calculating δ at Epo ≥ 1.0 keV of insulators and negative electron affinity NEA semiconductors is presented and experimentally proved, where δ is secondary electron yield. The methods of calculating mean escape depth of secondary electrons 1/α and B of insulators and NEA semiconductors are presented, respectively; where B is the probability that an internal secondary electron escapes into vacuum upon reaching the surface of emitter. From the relationships among parameters of SEE and the comparison between the values of 1/α and B obtained in this study and those obtained in former work, it concludes that the methods of calculating 1/α and B are correct.