Single Electron Memory Effect Using Random Telegraph Signals at Room Temperature

We show a manipulation of a single electron at room temperature by controlling Random Telegraph Signals (RTSs) by voltage pulses. Our silicon nanowire triple-gate transistor exhibited RTSs when potential barriers were electrically created by two of the three gates. From the statistics of the signals...

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Veröffentlicht in:Frontiers in physics 2019-10, Vol.7
Hauptverfasser: Ibukuro, Kouta, Husain, Muhammad Khaled, Li, Zuo, Hillier, Joseph, Liu, Fayong, Tomita, Isao, Tsuchiya, Yoshishige, Rutt, Harvey, Saito, Shinichi
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Sprache:eng
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Zusammenfassung:We show a manipulation of a single electron at room temperature by controlling Random Telegraph Signals (RTSs) by voltage pulses. Our silicon nanowire triple-gate transistor exhibited RTSs when potential barriers were electrically created by two of the three gates. From the statistics of the signals, we optimized the voltage pulse such that a single electron was intentionally captured in the potential well, and the retention time of approximately 10 ms was observed in this memory operation. This study indicates that a single electron effect can be controllable in a form of RTSs at room temperature by electrically defining a potential well.
ISSN:2296-424X
2296-424X
DOI:10.3389/fphy.2019.00152