In‐Plane AlN‐based Actuator: Toward a New Generation of Piezoelectric MEMS

A novel design that utilizes aluminum nitride (AlN) piezoelectric thin films deposited on vertical surfaces for lateral motion and sensing is a step toward emerging multi‐axial microelectromechanical systems (MEMS). This work demonstrates the fabrication process and potential applications of an in‐plane moving piezoactuator. The actuator is excited using the inverse piezoelectric effect of the AlN thin film grown on the vertical surfaces of a Si cantilever. Lateral motion of the actuator is enabled when a voltage is applied between the top and bottom electrodes of the device, which are highly doped Si and titanium nitride thin film. The motion of the actuator is captured using scanning electron microscope. The development of a novel architecture for 3D motion in micro‐ and nanoelectromechanical systems (MEMS and NEMS) brings interesting prospects for the fabrication of state‐of‐the‐art devices and technologies. Piezoelectric aluminum nitride (AlN) grown on vertical surfaces can be implemented in the fabrication of innovative MEMS that enable multiaxial motion. In this work, the fabrication process for the first AlN‐based in‐plane piezoactuator is demonstrated.