Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers
We investigated the effect of thermal oxidation on crystalline faults in 4H-SiC epilayers using photoluminescence imaging. We found that a comb-shaped dislocation array was deformed by thermal oxidation. We also found that line-shaped faults perpendicular to the off-cut direction were formed during...
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Veröffentlicht in: | AIP advances 2015-12, Vol.5 (12), p.127116-127116-6 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We investigated the effect of thermal oxidation on crystalline faults in 4H-SiC epilayers using photoluminescence imaging. We found that a comb-shaped dislocation array was deformed by thermal oxidation. We also found that line-shaped faults perpendicular to the off-cut direction were formed during oxidation and were stretched and increased with the oxidation time. Since these line-shaped faults were peculiar to the oxidation and stretched/increased with the oxide growth, they were identified as oxidation-induced stacking faults as seen in Si oxidation. |
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ISSN: | 2158-3226 2158-3226 |
DOI: | 10.1063/1.4938126 |