Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers

We investigated the effect of thermal oxidation on crystalline faults in 4H-SiC epilayers using photoluminescence imaging. We found that a comb-shaped dislocation array was deformed by thermal oxidation. We also found that line-shaped faults perpendicular to the off-cut direction were formed during...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:AIP advances 2015-12, Vol.5 (12), p.127116-127116-6
Hauptverfasser: Miyano, Yutaro, Asafuji, Ryosuke, Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We investigated the effect of thermal oxidation on crystalline faults in 4H-SiC epilayers using photoluminescence imaging. We found that a comb-shaped dislocation array was deformed by thermal oxidation. We also found that line-shaped faults perpendicular to the off-cut direction were formed during oxidation and were stretched and increased with the oxidation time. Since these line-shaped faults were peculiar to the oxidation and stretched/increased with the oxide growth, they were identified as oxidation-induced stacking faults as seen in Si oxidation.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4938126