High-performance van der Waals antiferroelectric CuCrP2S6-based memristors

Layered thio- and seleno-phosphate ferroelectrics, such as CuInP 2 S 6 , are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP 2 S 6 -based memory devices suffer from poor thermal stability (

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Veröffentlicht in:	Nature communications 2023-11, Vol.14 (1), p.7891-7891, Article 7891
Hauptverfasser:	Ma, Yinchang, Yan, Yuan, Luo, Linqu, Pazos, Sebastian, Zhang, Chenhui, Lv, Xiang, Chen, Maolin, Liu, Chen, Wang, Yizhou, Chen, Aitian, Li, Yan, Zheng, Dongxing, Lin, Rongyu, Algaidi, Hanin, Sun, Minglei, Liu, Jefferson Zhe, Tu, Shaobo, Alshareef, Husam N., Gong, Cheng, Lanza, Mario, Xue, Fei, Zhang, Xixiang
Format:	Artikel
Sprache:	eng
Schlagworte:	639/301/1005/1008 639/766/119/996 639/925/927/1007 Antiferroelectricity Crystals Curie temperature Electric fields Ferroelectric materials Ferroelectrics First principles Humanities and Social Sciences Long-term potentiation Memory devices Memristors multidisciplinary Neuromorphic computing Phase transitions Polarization Robustness Science Science (multidisciplinary) Switching Thermal emission Thermal stability
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Zusammenfassung:	Layered thio- and seleno-phosphate ferroelectrics, such as CuInP 2 S 6 , are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP 2 S 6 -based memory devices suffer from poor thermal stability (
ISSN:	2041-1723 2041-1723
DOI:	10.1038/s41467-023-43628-x