Fabrication of In(P)As Quantum Dots by Interdiffusion of P and As on InP(311)B Substrate

Herein, we report on our investigation of a fabrication scheme for self-assembled quantum dots (QDs), which is another type of Stranski–Krastanow (S–K) growth mode. The In(P)As QD structure was formed by the irradiation of As flux on an InP(311)B surface in a molecular beam epitaxy system controlled...

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Veröffentlicht in:	Crystals (Basel) 2020-02, Vol.10 (2), p.90
Hauptverfasser:	Akahane, Kouichi, Matsumoto, Atsushi, Umezawa, Toshimasa, Yamamoto, Naokatsu
Format:	Artikel
Sprache:	eng
Schlagworte:	atomic force microscopy desorption diffusion molecular beam epitaxy nanostructures semiconducting iii-v materials
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Zusammenfassung:	Herein, we report on our investigation of a fabrication scheme for self-assembled quantum dots (QDs), which is another type of Stranski–Krastanow (S–K) growth mode. The In(P)As QD structure was formed by the irradiation of As flux on an InP(311)B surface in a molecular beam epitaxy system controlled by substrate temperature and irradiation duration. These QDs show photoluminescence at around 1500 nm, which is suitable for fiber optic communication systems. The QDs formed by this structure had high As composition because they had size, density, and emission wavelength similar to those of QDs grown by the usual S–K growth mode.
ISSN:	2073-4352 2073-4352
DOI:	10.3390/cryst10020090